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molecules on Si(001) surfaces and SiO desorption yieldTeraoka, Yuden; Yoshigoe, Akitaka
Hyomen Kagaku, 23(8), p.519 - 523, 2002/08
no abstracts in English
observation on oxygen chemisorption states on Si(001)-2
1 during supersonic oxygen molecular beam irradiationYoshigoe, Akitaka; Teraoka, Yuden
Applied Surface Science, 190(1-4), p.60 - 65, 2002/05
Times Cited Count：10 Percentile：47.94(Chemistry, Physical)no abstracts in English
1 surface oxidation at room temperatureYoshigoe, Akitaka; Tsuda, Yasutaka; Tominaga, Aki; Sakamoto, Tetsuya; Ogawa, Shuichi*; Takakuwa, Yuji*
no journal, ,
In Society 5.0, nanometer-scaled devices with high performance and low-power are required. Since silicon (Si) based metal-oxide-semiconductor (MOS) transistors play an important role in the application of information and communication technology, precise control and understanding of Si surface oxidation is still important. However, the debate on the Si surface oxidation by molecular oxygen still remains. In our previous study, we found that the O1s photoelectron spectra of room temperature oxidation of Si(001)21 surface show satellite peaks indicating molecularly adsorbed oxygen. In this study, the role of molecularly adsorbed oxygen in the oxidation reaction in relation to the translational energy of incident oxygen molecules was investigated by synchrotron radiation real-time photoemission spectroscopy. All experiments were conducted using the surface experimental station of JAEA's BL23SU at SPring-8. Even on a p-type Si(001) surface under molecular beam irradiation with the translational energy of 0.06 eV, a satellite peak was clearly observed at a binding energy of about 4.45 eV lower than the main peak (oxygen atom in Si-O-Si). The role of molecularly adsorption in the oxidation reaction will be discussed from the results of signal changes with the progress of oxidation times.
